 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MJD243 (NPN), MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications http://onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. Features * Collector-Emitter Sustaining Voltage - * VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = 1.0 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.6 Vdc (Max) @ IC = 1.0 Adc High Current-Gain - Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available 4.0 A, 100 V, 12.5 W POWER TRANSISTOR 4 4 12 3 * * * Base 1 Collector 2 Emitter 3 DPAK-3 CASE 369D STYLE 1 DPAK-3 CASE 369C STYLE 1 * * * * * MARKING DIAGRAMS YWW J253G YWW J2x3G Y WW x G = Year = Work Week = 4 or 5 = Pb-Free Package Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2007 1 March, 2007 - Rev. 10 Publication Order Number: MJD243/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I II I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III 2. 3. 4. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted on minimum pad sizes recommended. DYNAMIC CHARACTERISTICS OFF CHARACTERISTICS IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III THERMAL CHARACTERISTICS MAXIMUM RATINGS Operating and Storage Junction Temperature Range Total Device Dissipation @ TA = 25C (Note 1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Base Current Collector Current Emitter-Base Voltage Collector-Emitter Voltage Collector-Base Voltage -Continuous -Peak Characteristic Rating ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain - Bandwidth Product (Note 4) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Base-Emitter On Voltage (Note 3) (IC = 500 mAdc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (Note 3) (IC = 2.0 Adc, IB = 200 mAdc) Collector-Emitter Saturation Voltage (Note 3) (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) DC Current Gain (Note 3) (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TJ = 125C) Collector-Emitter Sustaining Voltage (Note 3) (IC = 10 mAdc, IB = 0) Thermal Resistance, When surface mounted on minimum pad sizes recommended. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. fT = hFE* ftest. Junction-to-Case Junction-to-Ambient (Note 2) Characteristic MJD243 (NPN), MJD253 (PNP) http://onsemi.com VCEO(sus) Symbol Symbol Symbol VCE(sat) VBE(sat) TJ, Tstg VBE(on) VCEO RqJC RqJA ICBO IEBO VCB VEB Cob hFE PD PD IC IB fT Min 100 40 40 15 -65 to + 150IIII C - - - - - - - - Value Value 1.4 0.011 10 89.3 12.5 0.1 100 100 1.0 4.0 8.0 7.0 Max 180 - 100 100 100 1.5 1.8 0.3 0.6 50 - - W W/C W W/C C/W nAdc nAdc mAdc MHz Unit Unit Unit Vdc Vdc Vdc Vdc Adc Adc Vdc Vdc Vdc pF - 2 MJD243 (NPN), MJD253 (PNP) TA TC 2.5 25 IC, COLLECTOR CURRENT (AMPS) PD, POWER DISSIPATION (WATTS) 10 5 2 1 0.5 0.2 0.1 5 ms dc 1 ms 500 ms 100 ms 2 20 1.5 15 TA (SURFACE MOUNT) 1 10 TC 0.5 0 5 0 0.05 0.02 0.01 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 25 50 75 100 125 150 T, TEMPERATURE (C) Figure 1. Power Derating Figure 2. Active Region Maximum Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150C. T J(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 0 (SINGLE PULSE) RqJC(t) = r(t) qJC RqJC = 10C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 20 50 100 200 Figure 3. Thermal Response http://onsemi.com 3 MJD243 (NPN), MJD253 (PNP) NPN MJD243 500 300 200 100 70 50 30 20 10 7.0 5.0 0.04 0.06 TJ = 150C 25C -55 C VCE = 1.0 V VCE = 2.0 V hFE , DC CURRENT GAIN 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 TJ = 150C 25C -55 C PNP MJD253 VCE = 1.0 V VCE = 2.0 V hFE , DC CURRENT GAIN 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 4. DC Current Gain 1.4 TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 5.0 V, VOLTAGE (VOLTS) 1.4 TJ = 25C 1.2 1.0 VBE(sat) @ IC/IB = 10 0.8 0.6 0.4 0.2 VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 VBE @ VCE = 1.0 V IC/IB = 10 5.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 5. "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.04 0.06 0.1 0.2 0.4 qVB FOR VBE *qVC FOR VCE(sat) -55 C to 25C 25C to 150C -55 C to 25C 0.6 1.0 2.0 4.0 25C to 150C *APPLIES FOR IC/IB hFE/3 -1.0 -1.5 -2.0 qVB FOR VBE 0.1 25C to 150C -55 C to 25C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 -2.5 0.04 0.06 IC, COLLECTOR CURRENT (AMP) Figure 6. Temperature Coefficients http://onsemi.com 4 MJD243 (NPN), MJD253 (PNP) VCC +30 V RC RB D1 -4 V SCOPE t, TIME (ns) 1K 500 300 200 100 50 30 20 10 5 3 2 1 0.01 NPN MJD243 PNP MJD253 td VCC = 30 V IC/IB = 10 TJ = 25C tr 25 ms +11 V 0 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) 3 5 10 Figure 7. Switching Time Test Circuit Figure 8. Turn-On Time 10K 5K 3K 2K 1K t, TIME (ns) 500 300 200 100 50 30 20 10 0.01 ts VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 TJ = 25C C, CAPACITANCE (pF) 100 70 50 30 20 tf NPN MJD243 PNP MJD253 3 5 10 10 1.0 2.0 MJD243 (NPN) MJD253 (PNP) 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Cob Cib 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 9. Turn-Off Time Figure 10. Capacitance 200 TJ = 25C C, CAPACITANCE (pF) 100 70 50 30 20 Cob Cib 10 1 2 3 5 7 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Figure 11. Capacitance http://onsemi.com 5 MJD243 (NPN), MJD253 (PNP) ORDERING INFORMATION Device MJD243 MJD243G MJD243T4 MJD243T4G MJD253-1 MJD253-1G MJD253T4 MJD253T4G Package Type DPAK-3 DPAK-3 (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) Package 369C 369C 369C 369C 369D 369D 369C 369C Shipping 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MJD243 (NPN), MJD253 (PNP) PACKAGE DIMENSIONS DPAK-3 CASE 369C ISSUE O -T- B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MJD243 (NPN), MJD253 (PNP) PACKAGE DIMENSIONS DPAK-3 (SINGLE GAUGE) CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 MJD243/D |
Price & Availability of MJD243G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |